A physics-derived and datasheet-driven non-iterative analytical model for comparing MOSFETs in various power converter conditions faster than SPICE simulations to help device selection

This paper introduces a fast, datasheet-driven analytical model for estimating the switching energy loss in MOSFETs, achieving reasonable accuracy (minimum error is 0.3% and maximum error is approximately 26%) against SPICE simulations, datasheet values and previous experimental results under various operating conditions across different devices. It is a non-iterative model and takes into account the non-linearity of gate-drain and drain-source capacitance, the impact of reverse recovery current, variation of forward transconductance and the non-linearity of transfer characteristics smoothly. It does not require any curve fitting to obtain necessary parameters. Therefore, it is straightforward to use and particularly useful for device selection. Due to the simple parameter driven nature of the model, the primary objective is not to do a direct comparison with the experiments, rather to get closer to the SPICE simulations, yet the model has been found to be more useful than the typical Figure of Merit (FoM) in comparing the efficiency of Power MOSFETs and predicted similar trends as seen in practical experiments with a Four Switch Buck Boost (FSBB) converter.