Advancement of MOSFET with the application of hafnium

Vijeta Devrani; Viranjay M. Srivastava

doi:10.1109/ICCCI.2012.6158903

Advancement of MOSFET with the application of hafnium

Vijeta Devrani^*, Viranjay M. Srivastava

^*Corresponding author for this work

Jaypee University of Information Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Citations (SciVal)

Original language	English
Title of host publication	2012 International Conference on Computer Communication and Informatics, ICCCI 2012
DOIs	https://doi.org/10.1109/ICCCI.2012.6158903
Publication status	Published (VoR) - 2012
Event	2012 International Conference on Computer Communication and Informatics, ICCCI 2012 - Coimbatore, India Duration: 10 Jan 2012 → 12 Jan 2012

Publication series

Name	2012 International Conference on Computer Communication and Informatics, ICCCI 2012

Conference

Conference	2012 International Conference on Computer Communication and Informatics, ICCCI 2012
Country/Territory	India
City	Coimbatore
Period	10/01/12 → 12/01/12

Keywords

CMOS
Hafnium-dioxide
High Dielectric
MOSFET Parameters
VLSI

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10.1109/ICCCI.2012.6158903

Cite this

@inproceedings{c810c4a26bb845c9893033c5a5fd15b0,

title = "Advancement of MOSFET with the application of hafnium",

keywords = "CMOS, Hafnium-dioxide, High Dielectric, MOSFET Parameters, VLSI",

author = "Vijeta Devrani and Srivastava, {Viranjay M.}",

year = "2012",

doi = "10.1109/ICCCI.2012.6158903",

language = "English",

isbn = "9781457715822",

series = "2012 International Conference on Computer Communication and Informatics, ICCCI 2012",

booktitle = "2012 International Conference on Computer Communication and Informatics, ICCCI 2012",

note = "2012 International Conference on Computer Communication and Informatics, ICCCI 2012 ; Conference date: 10-01-2012 Through 12-01-2012",

}

Devrani, V & Srivastava, VM 2012, Advancement of MOSFET with the application of hafnium. in 2012 International Conference on Computer Communication and Informatics, ICCCI 2012., 6158903, 2012 International Conference on Computer Communication and Informatics, ICCCI 2012, 2012 International Conference on Computer Communication and Informatics, ICCCI 2012, Coimbatore, India, 10/01/12. https://doi.org/10.1109/ICCCI.2012.6158903

Advancement of MOSFET with the application of hafnium. / Devrani, Vijeta; Srivastava, Viranjay M.
2012 International Conference on Computer Communication and Informatics, ICCCI 2012. 2012. 6158903 (2012 International Conference on Computer Communication and Informatics, ICCCI 2012).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Advancement of MOSFET with the application of hafnium

AU - Devrani, Vijeta

AU - Srivastava, Viranjay M.

PY - 2012

Y1 - 2012

KW - CMOS

KW - Hafnium-dioxide

KW - High Dielectric

KW - MOSFET Parameters

KW - VLSI

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U2 - 10.1109/ICCCI.2012.6158903

DO - 10.1109/ICCCI.2012.6158903

M3 - Conference contribution

AN - SCOPUS:84858741642

SN - 9781457715822

T3 - 2012 International Conference on Computer Communication and Informatics, ICCCI 2012

BT - 2012 International Conference on Computer Communication and Informatics, ICCCI 2012

T2 - 2012 International Conference on Computer Communication and Informatics, ICCCI 2012

Y2 - 10 January 2012 through 12 January 2012

ER -

Advancement of MOSFET with the application of hafnium

Publication series

Conference

Keywords

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