Advancement of MOSFET with the application of hafnium

Vijeta Devrani*, Viranjay M. Srivastava

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    2 Citations (SciVal)
    Original languageEnglish
    Title of host publication2012 International Conference on Computer Communication and Informatics, ICCCI 2012
    DOIs
    Publication statusPublished (VoR) - 2012
    Event2012 International Conference on Computer Communication and Informatics, ICCCI 2012 - Coimbatore, India
    Duration: 10 Jan 201212 Jan 2012

    Publication series

    Name2012 International Conference on Computer Communication and Informatics, ICCCI 2012

    Conference

    Conference2012 International Conference on Computer Communication and Informatics, ICCCI 2012
    Country/TerritoryIndia
    CityCoimbatore
    Period10/01/1212/01/12

    Keywords

    • CMOS
    • Hafnium-dioxide
    • High Dielectric
    • MOSFET Parameters
    • VLSI

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