Analysis and effects of voids in cylindrical surrounding double-gate MOSFET for the RF switches

Viranjay M. Srivastava*

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    Original languageEnglish
    Pages (from-to)243-251
    Number of pages9
    JournalNanoscience and Nanotechnology - Asia
    Volume7
    Issue number2
    DOIs
    Publication statusPublished (VoR) - 2017

    Keywords

    • CSDG MOSFET
    • DG MOSFET
    • Leakage current
    • Nanotechnology
    • RF switch
    • Switching capacitance
    • VLSI
    • Voids

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