Analysis of InN/La2O3 Twosome for Double-Gate MOSFETs for Radio Frequency Applications

Naveenbalaji Gowthaman, Viranjay Srivastava

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    1 Citation (SciVal)
    Original languageEnglish
    Title of host publicationAdvanced Materials and Manufacturing Engineering II - Selected peer-reviewed full text papers from the 3rd International Conference onMaterials Science and Manufacturing Technology, ICMSMT 2021
    EditorsRamya Muthusamy, Thangaprakash Sengodan
    PublisherTrans Tech Publications Ltd
    Pages147-157
    Number of pages11
    ISBN (Print)9783035712681
    DOIs
    Publication statusPublished (VoR) - 2022
    Event3rd International Conference on Materials Science and Manufacturing Technology, ICMSMT 2021 - Virtual, Online
    Duration: 8 Apr 20219 Apr 2021

    Publication series

    NameMaterials Science Forum
    Volume1048 MSF
    ISSN (Print)0255-5476
    ISSN (Electronic)1662-9752

    Conference

    Conference3rd International Conference on Materials Science and Manufacturing Technology, ICMSMT 2021
    CityVirtual, Online
    Period8/04/219/04/21

    Keywords

    • CMOS
    • Doping
    • Double-Gate (DG) MOSFETs
    • High-k dielectric
    • Nanotechnology
    • Silicon
    • VLSI

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