@inproceedings{5e86e6299e2c412b92560b1632d2436b,
title = "Analysis of InN/La2O3 Twosome for Double-Gate MOSFETs for Radio Frequency Applications",
keywords = "CMOS, Doping, Double-Gate (DG) MOSFETs, High-k dielectric, Nanotechnology, Silicon, VLSI",
author = "Naveenbalaji Gowthaman and Viranjay Srivastava",
note = "Publisher Copyright: {\textcopyright} 2022 Trans Tech Publications Ltd, Switzerland.; 3rd International Conference on Materials Science and Manufacturing Technology, ICMSMT 2021 ; Conference date: 08-04-2021 Through 09-04-2021",
year = "2022",
doi = "10.4028/www.scientific.net/MSF.1048.147",
language = "English",
isbn = "9783035712681",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "147--157",
editor = "Ramya Muthusamy and Thangaprakash Sengodan",
booktitle = "Advanced Materials and Manufacturing Engineering II - Selected peer-reviewed full text papers from the 3rd International Conference onMaterials Science and Manufacturing Technology, ICMSMT 2021",
}