Analysis of Nanometer-Scale n-Type Double-Gate (DG) MOSFETs Using High- Dielectrics for High-Speed Applications

Naveenbalaji Gowthaman; Viranjay M. Srivastava

doi:10.1109/ISSE51996.2021.9467619

Analysis of Nanometer-Scale n-Type Double-Gate (DG) MOSFETs Using High- Dielectrics for High-Speed Applications

Naveenbalaji Gowthaman^*, Viranjay M. Srivastava

^*Corresponding author for this work

University of KwaZulu-Natal

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

9 Citations (SciVal)

Original language	English
Title of host publication	2021 44th International Spring Seminar on Electronics Technology, ISSE 2021
Publisher	IEEE Computer Society
ISBN (Electronic)	9781665414777
DOIs	https://doi.org/10.1109/ISSE51996.2021.9467619
Publication status	Published (VoR) - 5 May 2021
Event	44th International Spring Seminar on Electronics Technology, ISSE 2021 - Bautzen, Germany Duration: 5 May 2021 → 9 May 2021

Publication series

Name	Proceedings of the International Spring Seminar on Electronics Technology
Volume	2021-May
ISSN (Print)	2161-2528
ISSN (Electronic)	2161-2536

Conference

Conference	44th International Spring Seminar on Electronics Technology, ISSE 2021
Country/Territory	Germany
City	Bautzen
Period	5/05/21 → 9/05/21

Access to Document

10.1109/ISSE51996.2021.9467619

Cite this

Gowthaman, N., & Srivastava, V. M. (2021). Analysis of Nanometer-Scale n-Type Double-Gate (DG) MOSFETs Using High- Dielectrics for High-Speed Applications. In 2021 44th International Spring Seminar on Electronics Technology, ISSE 2021 Article 9467619 (Proceedings of the International Spring Seminar on Electronics Technology; Vol. 2021-May). IEEE Computer Society. https://doi.org/10.1109/ISSE51996.2021.9467619

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Gowthaman, N & Srivastava, VM 2021, Analysis of Nanometer-Scale n-Type Double-Gate (DG) MOSFETs Using High- Dielectrics for High-Speed Applications. in 2021 44th International Spring Seminar on Electronics Technology, ISSE 2021., 9467619, Proceedings of the International Spring Seminar on Electronics Technology, vol. 2021-May, IEEE Computer Society, 44th International Spring Seminar on Electronics Technology, ISSE 2021, Bautzen, Germany, 5/05/21. https://doi.org/10.1109/ISSE51996.2021.9467619

Analysis of Nanometer-Scale n-Type Double-Gate (DG) MOSFETs Using High- Dielectrics for High-Speed Applications. / Gowthaman, Naveenbalaji; Srivastava, Viranjay M.
2021 44th International Spring Seminar on Electronics Technology, ISSE 2021. IEEE Computer Society, 2021. 9467619 (Proceedings of the International Spring Seminar on Electronics Technology; Vol. 2021-May).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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Gowthaman N, Srivastava VM. Analysis of Nanometer-Scale n-Type Double-Gate (DG) MOSFETs Using High- Dielectrics for High-Speed Applications. In 2021 44th International Spring Seminar on Electronics Technology, ISSE 2021. IEEE Computer Society. 2021. 9467619. (Proceedings of the International Spring Seminar on Electronics Technology). doi: 10.1109/ISSE51996.2021.9467619

Analysis of Nanometer-Scale n-Type Double-Gate (DG) MOSFETs Using High- Dielectrics for High-Speed Applications

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