Analysis of Source-and-Drain Doping for the Underlapped FinFET

In the deep sub-nanometer technology, the FinFET device contains only a few number of dopant atoms in the channel region. As a result of this technological advancement, exploring the role of these countable dopants in the device operation is required. In this work, authors present the impact of dopant atoms from 3-different regions (i.e., source, drain, and body) onto the performance parameters of the FinFET device using the full 3D electronic device simulation. The influence of countable dopant atoms on body-source/drain underlap length resulted in significant fluctuations in all electrical performance metrics. It has been observed that source/drain doping dominates the variations in electrical characteristics for underlap FinFET devices. The dopant atoms from the source/drain side contribute more than ∼50% of the overall variations in the drain current. Further, the findings of this work suggest a new FinFET device technology, i.e., single-dopant atom electronics.