Analytical Modeling of [001] Orientation in Silicon Trigate Rectangular Nanowire Using a Tight-Binding Model

Pattunnarajam Paramasivam, Naveenbalaji Gowthaman, Viranjay M. Srivastava*

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    1 Citation (SciVal)

    Abstract

    In the realm of electronics, the performance of Silicon Trigate Rectangular Nanowires (Si-TRNW) and the structural characteristics of <001> orientation using tight-binding models have been analyzed. The fast algorithm based on the tight-binding model for Trigate Silicon nanowires yielded a remarkable ION/IOFF ratio of 1.49× 1010 and leakage current (ILeak or IOFF) of 3.7 × 10−17μA. Furthermore, a maximum conduction band energy level (Ecmax) of −0.003 eV and a Subthreshold Slope (SS) of 120 mV has been obtained for a channel length of 15 nm. At an energy level of 3 eV, a high Transmission coefcient, T(ε), of 4 has been attained using the E-k dispersion method. This analysis also involved the calculation of three ∆ valleys pertinent to the channel’s efectiveness in <001> orientation, with proximity nearer to 1 m0. The Schrodinger-Poisson equation has been analyzed with the Ballistic transport along the [001] z-direction in channel potential. A comparative assessment has been also performed between the lateral dimensions of rectangular nanowires with equal energy levels, utilizing both the tight-binding model and Density Functional Theory (DFT) techniques. In some high-frequency applications, a high transmission coefcient is benefcial to maximize the amount of energy or information that gets transmitted. Reducing leakage current would ofer a technological pathway for performance improvement of high-frequency applications. The high ONcurrent (ION) has been obtained through the DFT approach between source and drain terminals is particularly desirable for applications demanding for fast switching speeds and high-performance computing. The strengths of both methods in hybrid approaches is a common strategy to achieve simulations that are both accurate and efcient. Notably, the nanowires subjected to hydrostatic strain, exhibiting enhanced mobility and exceptional electrostatic integrity, emerged as pivotal components for forthcoming technology nodes. This research augments the potential feasibility of strain-based Si nanowires, even at the 3 nm scale, in subsequent technological advancements.
    Original languageEnglish
    Pages (from-to)1
    Number of pages14
    JournalSilicon
    DOIs
    Publication statusPublished (VoR) - 2 Feb 2024

    Keywords

    • Crystal orientation
    • Density functional theory
    • Hydrostatic strain
    • Microelectronics
    • Nanotechnology
    • Subthreshold slope
    • Tight-binding model
    • Trigate silicon nanowire
    • VLSI

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