Analytical Subthreshold Model of Electrical Field-Effect for the Capacitance in Cylindrical Surrounding Double-Gate MOSFET Paradigm

Naveenbalaji Gowthaman; Viranjay M. Srivastava

doi:10.1007/s12633-022-02181-w

Analytical Subthreshold Model of Electrical Field-Effect for the Capacitance in Cylindrical Surrounding Double-Gate MOSFET Paradigm

Naveenbalaji Gowthaman^*, Viranjay M. Srivastava

^*Corresponding author for this work

University of KwaZulu-Natal

Research output: Contribution to journal › Article › peer-review

2 Citations (SciVal)

Original language	English
Pages (from-to)	2313-2322
Number of pages	10
Journal	Silicon
Volume	15
Issue number	5
DOIs	https://doi.org/10.1007/s12633-022-02181-w
Publication status	Published (VoR) - Apr 2023

Funding

The authors are thankful to the University of KwaZulu-Natal, Durban, South Africa, for providing various support to carry on this research work.

Funders	Funder number
Inyuvesi Yakwazulu-Natali

Keywords

Channel engineering
Cylindrical Surrounding Double-Gate (CSDG) MOSFET
Double-Gate (DG) MOSFET
Gate modeling
High-ƙ dielectrics
Microelectronics
Nanotechnology
VLSI

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10.1007/s12633-022-02181-w

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title = "Analytical Subthreshold Model of Electrical Field-Effect for the Capacitance in Cylindrical Surrounding Double-Gate MOSFET Paradigm",

keywords = "Channel engineering, Cylindrical Surrounding Double-Gate (CSDG) MOSFET, Double-Gate (DG) MOSFET, Gate modeling, High-ƙ dielectrics, Microelectronics, Nanotechnology, VLSI",

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T1 - Analytical Subthreshold Model of Electrical Field-Effect for the Capacitance in Cylindrical Surrounding Double-Gate MOSFET Paradigm

AU - Gowthaman, Naveenbalaji

AU - Srivastava, Viranjay M.

PY - 2023/4

Y1 - 2023/4

KW - Channel engineering

KW - Cylindrical Surrounding Double-Gate (CSDG) MOSFET

KW - Double-Gate (DG) MOSFET

KW - Gate modeling

KW - High-ƙ dielectrics

KW - Microelectronics

KW - Nanotechnology

KW - VLSI

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JO - Silicon

JF - Silicon

IS - 5

ER -

Analytical Subthreshold Model of Electrical Field-Effect for the Capacitance in Cylindrical Surrounding Double-Gate MOSFET Paradigm

Funding

Keywords

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