Arbitrary alloy semiconductor material based DG MOSFET for high-frequency industrial and hybrid consumer applications

Naveenbalaji Gowthaman, Viranjay M. Srivastava

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    4 Citations (SciVal)
    Original languageEnglish
    Title of host publicationProceedings of 2021 IEEE AFRICON, AFRICON 2021
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    ISBN (Electronic)9781665419840
    DOIs
    Publication statusPublished (VoR) - 13 Sept 2021
    Event2021 IEEE AFRICON, AFRICON 2021 - Virtual, Arusha, Tanzania, United Republic of
    Duration: 13 Sept 202115 Sept 2021

    Publication series

    NameIEEE AFRICON Conference
    Volume2021-September
    ISSN (Print)2153-0025
    ISSN (Electronic)2153-0033

    Conference

    Conference2021 IEEE AFRICON, AFRICON 2021
    Country/TerritoryTanzania, United Republic of
    CityVirtual, Arusha
    Period13/09/2115/09/21

    Keywords

    • And VLSI
    • Consumer Electronics
    • Double-Gate MOSFET
    • High- dielectric
    • High-speed devices
    • Microelectronics
    • Nanotechnology

    Fingerprint

    Dive into the research topics of 'Arbitrary alloy semiconductor material based DG MOSFET for high-frequency industrial and hybrid consumer applications'. Together they form a unique fingerprint.

    Cite this