Bending-strain-resilient threshold and RF stability of a La2O3/Al0.43Ga0.57As cylindrical surrounding double-gate MOSFET on a cellulose nanofiber substrate

Naveenbalaji Gowthaman; VIRANJAY SRIVASTAVA

doi:10.22541/authorea.15008145/v1

Bending-strain-resilient threshold and RF stability of a La2O3/Al0.43Ga0.57As cylindrical surrounding double-gate MOSFET on a cellulose nanofiber substrate

Naveenbalaji Gowthaman
, VIRANJAY SRIVASTAVA

Department of Engineering

Research output: Working paper › Preprint

Original language	English
DOIs	https://doi.org/10.22541/authorea.15008145/v1
Publication status	Published (VoR) - 1 Sept 2026

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10.22541/authorea.15008145/v1

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title = "Bending-strain-resilient threshold and RF stability of a La2O3/Al0.43Ga0.57As cylindrical surrounding double-gate MOSFET on a cellulose nanofiber substrate",

author = "Naveenbalaji Gowthaman and VIRANJAY SRIVASTAVA",

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AU - Gowthaman, Naveenbalaji

AU - SRIVASTAVA, VIRANJAY

PY - 2026/9/1

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DO - 10.22541/authorea.15008145/v1

M3 - Preprint

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Bending-strain-resilient threshold and RF stability of a La2O3/Al0.43Ga0.57As cylindrical surrounding double-gate MOSFET on a cellulose nanofiber substrate

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