Capacitive Model of CSDG MOSFET at Pinch-off for Switching Characteristics

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    4 Citations (SciVal)
    Original languageEnglish
    Title of host publication2019 10th International Conference on Computing, Communication and Networking Technologies, ICCCNT 2019
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    ISBN (Electronic)9781538659069
    DOIs
    Publication statusPublished (VoR) - Jul 2019
    Event10th International Conference on Computing, Communication and Networking Technologies, ICCCNT 2019 - Kanpur, India
    Duration: 6 Jul 20198 Jul 2019

    Publication series

    Name2019 10th International Conference on Computing, Communication and Networking Technologies, ICCCNT 2019

    Conference

    Conference10th International Conference on Computing, Communication and Networking Technologies, ICCCNT 2019
    Country/TerritoryIndia
    CityKanpur
    Period6/07/198/07/19

    Keywords

    • CSDG MOSFET
    • Cylindrical oxide-capacitance
    • Double-gate MOSFET
    • Microelectronics
    • Nanotechnology
    • VLSI

    Fingerprint

    Dive into the research topics of 'Capacitive Model of CSDG MOSFET at Pinch-off for Switching Characteristics'. Together they form a unique fingerprint.

    Cite this