Capacitive Modeling of Cylindrical Surrounding Double-Gate MOSFETs for Hybrid RF Applications

Naveenbalaji Gowthaman; Viranjay M. Srivastava

doi:10.1109/ACCESS.2021.3090956

Capacitive Modeling of Cylindrical Surrounding Double-Gate MOSFETs for Hybrid RF Applications

Naveenbalaji Gowthaman^*, Viranjay M. Srivastava

^*Corresponding author for this work

University of KwaZulu-Natal

Research output: Contribution to journal › Article › peer-review

21 Citations (SciVal)

Original language	English
Article number	9461001
Pages (from-to)	89234-89242
Number of pages	9
Journal	IEEE Access
Volume	9
DOIs	https://doi.org/10.1109/ACCESS.2021.3090956
Publication status	Published (VoR) - 2021

Keywords

CSDG MOSFET
cylindrical structure
double-gate (DG) MOSFET
high-Ð° dielectric
microelectronics
nanotechnology
VLSI

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10.1109/ACCESS.2021.3090956

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title = "Capacitive Modeling of Cylindrical Surrounding Double-Gate MOSFETs for Hybrid RF Applications",

keywords = "CSDG MOSFET, cylindrical structure, double-gate (DG) MOSFET, high-{\DH}° dielectric, microelectronics, nanotechnology, VLSI",

author = "Naveenbalaji Gowthaman and Srivastava, {Viranjay M.}",

note = "Publisher Copyright: {\textcopyright} 2013 IEEE.",

year = "2021",

doi = "10.1109/ACCESS.2021.3090956",

language = "English",

volume = "9",

pages = "89234--89242",

journal = "IEEE Access",

issn = "2169-3536",

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TY - JOUR

T1 - Capacitive Modeling of Cylindrical Surrounding Double-Gate MOSFETs for Hybrid RF Applications

AU - Gowthaman, Naveenbalaji

AU - Srivastava, Viranjay M.

PY - 2021

Y1 - 2021

KW - CSDG MOSFET

KW - cylindrical structure

KW - double-gate (DG) MOSFET

KW - high-Ð° dielectric

KW - microelectronics

KW - nanotechnology

KW - VLSI

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U2 - 10.1109/ACCESS.2021.3090956

DO - 10.1109/ACCESS.2021.3090956

M3 - Article

AN - SCOPUS:85112713949

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VL - 9

SP - 89234

EP - 89242

JO - IEEE Access

JF - IEEE Access

M1 - 9461001

ER -

Capacitive Modeling of Cylindrical Surrounding Double-Gate MOSFETs for Hybrid RF Applications

Keywords

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