Channel Length Scaling Pattern for Cylindrical Surrounding Double-Gate (CSDG) MOSFET

Maduagwu Anthony Uchechukwu*, Viranjay M. Srivastava

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    26 Citations (SciVal)
    Original languageEnglish
    Article number9131785
    Pages (from-to)121204-121210
    Number of pages7
    JournalIEEE Access
    Volume8
    DOIs
    Publication statusPublished (VoR) - 2020

    Keywords

    • Channel length
    • CSDG MOSFET
    • nanotechnology
    • natural length
    • scaling pattern semiconductors
    • short channel effects (SCEs)
    • VLSI

    Fingerprint

    Dive into the research topics of 'Channel Length Scaling Pattern for Cylindrical Surrounding Double-Gate (CSDG) MOSFET'. Together they form a unique fingerprint.

    Cite this