Characterization of silicon nanowire transistor

Hani Taha Al Ariqi, Waheb A. Jabbar*, Yasir Hashim, Hadi Bin Manap

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    6 Citations (SciVal)


    This paper analyses the temperature sensitivity of Silicon Nanowire Transistor (SiNWT) depends on the diameter ( of channel. In addition, it also investigates the possibility of utilizing SiNWT as a Nano- temperature sensor. The MuGFET simulation tool has been utilized to conduct a comprehensive simulation to evaluate both electrical and temperature characteristics of SiNWT. Current-voltage characteristics with different values of temperature and with a varying diameter of the Nano wire channel ( = 80, 40, 20 and 10 nm), were simulated. Diode operating mode connection of the transistor is suggested for measuring the temperature sensitivity of SiNWT. As simulation results demonstrated, the best temperature sensitivity was occurred at lower temperature with increasing the channel diameter. We also illustrate the impact of varying temperature and channel diameter on electrical characteristics of SiNWT including, Subthreshold Swing (SS), Threshold voltage (, and Drain-induced barrier lowering (DIBL), which were proportionally increased with the operating temperature.
    Original languageEnglish
    Pages (from-to)2860-2866
    Number of pages7
    JournalTelkomnika (Telecommunication Computing Electronics and Control)
    Issue number6
    Publication statusPublished (VoR) - 2019


    This work is supported by the Universiti Malaysia Pahang ( via Research Grant UMP-IBM Centre of Excellence RDU190304.

    FundersFunder number
    Universiti Malaysia PahangRDU190304


      • Channel diameter
      • DIBL
      • SS
      • SiNWT
      • Temperature sensitivity


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