TY - GEN
T1 - Class-B Power Amplifier with Si-Based Double-Gate MOSFET
T2 - 5th International Conference on Materials Sciences and Nanomaterials, ICMSN 2021 and 4th International Conference on Advanced Composite Materials, ICACM 2021
AU - Mbonane, S. A.N.D.I.L.E.H.
AU - Srivastava, V. I.R.A.N.J.A.Y.M.
N1 - Publisher Copyright:
© 2022 Trans Tech Publications Ltd, Switzerland.
PY - 2022
Y1 - 2022
KW - Dielectric Materials
KW - Double-Gate (DG) MOSFET
KW - Electronic Materials
KW - Nanotechnology; VLSI
KW - Semiconductor
KW - Silicon
UR - http://www.scopus.com/inward/record.url?scp=85127247256&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85127247256&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/KEM.907.50
DO - 10.4028/www.scientific.net/KEM.907.50
M3 - Conference contribution
AN - SCOPUS:85127247256
SN - 9783035718942
T3 - Key Engineering Materials
SP - 50
EP - 56
BT - Advanced Materials Science and Technologies II - Selected peer-reviewed full text papers from 5th International Conference on Materials Sciences and Nanomaterials, ICMSN 2021 and 4th International Conference on Advanced Composite Materials, ICACM 2021
A2 - Zhao, Yuyuan
PB - Trans Tech Publications Ltd
Y2 - 25 August 2021 through 27 August 2021
ER -