Comparative Parametric Analysis of Class-B Power Amplifier Using BJT, Single-Gate MOSFET, and Double-Gate MOSFET

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@article{b8eeeae984eb449aaf1a2aa4f06afb4d,

title = "Comparative Parametric Analysis of Class-B Power Amplifier Using BJT, Single-Gate MOSFET, and Double-Gate MOSFET",

author = "Mbonane, \{Sandile H.\} and Srivastava, \{Viranjay M.\}",

year = "2022",

month = feb,

day = "17",

doi = "10.4028/p-57edxh",

language = "English",

journal = "Materials Science Forum",

issn = "0255-5476",

publisher = "Trans Tech Publications",

}

TY - JOUR

T1 - Comparative Parametric Analysis of Class-B Power Amplifier Using BJT, Single-Gate MOSFET, and Double-Gate MOSFET

AU - Mbonane, Sandile H.

AU - Srivastava, Viranjay M.

PY - 2022/2/17

Y1 - 2022/2/17

UR - https://doi.org/10.4028/p-57edxh

U2 - 10.4028/p-57edxh

DO - 10.4028/p-57edxh

M3 - Article

SN - 0255-5476

JO - Materials Science Forum

JF - Materials Science Forum

ER -