Design and Analysis of InP/InAs/AlGaAs Based Cylindrical Surrounding Double-Gate (CSDG) MOSFETs with La2O3for 5-nm Technology

Pattunnarajam Paramasivam, Naveenbalaji Gowthaman*, Viranjay M. Srivastava

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    13 Citations (SciVal)
    Original languageEnglish
    Pages (from-to)159566-159576
    Number of pages11
    JournalIEEE Access
    Volume9
    DOIs
    Publication statusPublished (VoR) - 2021

    Keywords

    • Charge carrier density
    • Composite channel
    • CSDG MOSFET
    • Electrostatic potential
    • High-k dielectric
    • nanotechnology
    • VLSI

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