Design and performance analysis of SiO2-MOSFET based absorber for reflected RF signal

Elliot O. Omoru; Viranjay M. Srivastava

doi:10.1016/j.matpr.2022.02.144

Design and performance analysis of SiO₂-MOSFET based absorber for reflected RF signal

Elliot O. Omoru, Viranjay M. Srivastava^*

^*Corresponding author for this work

University of KwaZulu-Natal

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	988-994
Number of pages	7
Journal	Materials Today: Proceedings
Volume	59
DOIs	https://doi.org/10.1016/j.matpr.2022.02.144
Publication status	Published (VoR) - Jan 2022

Keywords

Absorbing material
MOSFET
Nanotechnology
Silicon
SiO
VLSI

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10.1016/j.matpr.2022.02.144

Cite this

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title = "Design and performance analysis of SiO2-MOSFET based absorber for reflected RF signal",

keywords = "Absorbing material, MOSFET, Nanotechnology, Silicon, SiO, VLSI",

author = "Omoru, {Elliot O.} and Srivastava, {Viranjay M.}",

note = "Publisher Copyright: {\textcopyright} 2022",

year = "2022",

month = jan,

doi = "10.1016/j.matpr.2022.02.144",

language = "English",

volume = "59",

pages = "988--994",

journal = "Materials Today: Proceedings",

issn = "2214-7853",

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AU - Omoru, Elliot O.

AU - Srivastava, Viranjay M.

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KW - Absorbing material

KW - MOSFET

KW - Nanotechnology

KW - Silicon

KW - SiO

KW - VLSI

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DO - 10.1016/j.matpr.2022.02.144

M3 - Article

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SN - 2214-7853

VL - 59

SP - 988

EP - 994

JO - Materials Today: Proceedings

JF - Materials Today: Proceedings

ER -

Design and performance analysis of SiO₂-MOSFET based absorber for reflected RF signal

Keywords

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