Design of an Active-Loaded Differential Voltage-Controlled Oscillator (VCO) Using Double-Gate MOSFET

Suvashan Pillay, Viranjay M. Srivastava*

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review


    A differential cross-coupled Voltage Controlled Oscillator (VCO) has been designed using the Double-Gate (DG) MOSFET for VHF applications. The DG MOSFET exhibits superior noise immunity with its high noise figure and is suitable for low-power, high-frequency applications. The proposed VCO has been designed using a differential topology with improved power consumption, design flexibility, and noise reduction. This also improves the high-frequency performance of existing differential amplifiers. Thereafter, the proposed VCO was compared with fabrication and design methods, particularly Silicon-based CMOS and Single-Gate (SG) MOSFET VCOs, as possible alternatives. Various printed circuit board (PCB) design practices were followed to minimise the noise and improve the overall efficiency of the circuitry. Key parameters for the analysis of this VCO are the output power, phase noise, and figure of merit, which have been realised as -2.91 dBm at peak and -69.79 dBc/Hz at 1 MHz, respectively. The power consumption of the designed VCO is 36 mW.
    Original languageEnglish
    Article number24
    Pages (from-to)248-263
    Number of pages16
    JournalInternational Journal of Engineering Trends and Technology
    Issue number12
    Publication statusPublished (VoR) - 1 Dec 2023


    This research work is funded by the Electricity Supply Commission (Eskom), South Africa, dated 31 January 2020, under the Tertiary Education Support Programme (TESP).

    FundersFunder number
    Electricity Supply Commission
    Tertiary Education Support Programme


      • Electronic
      • nanotechnology
      • communication
      • physical characteristics


      Dive into the research topics of 'Design of an Active-Loaded Differential Voltage-Controlled Oscillator (VCO) Using Double-Gate MOSFET'. Together they form a unique fingerprint.

      Cite this