Design of Concentric Cylindrical Surrounding Double-Gate (CSDG) MOSFETs – A Fabrication Perspective in Nanoscale Regime

Naveenbalaji Gowthaman*, Viranjay M. Srivastava

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    2 Citations (SciVal)
    Original languageEnglish
    Pages (from-to)2439-2449
    Number of pages11
    JournalSilicon
    Volume15
    Issue number5
    DOIs
    Publication statusPublished (VoR) - Apr 2023

    Funding

    The authors are thankful to the University of KwaZulu-Natal, Durban, South Africa, for providing various support to carry on this research work.

    FundersFunder number
    Inyuvesi Yakwazulu-Natali

      Keywords

      • Channel dopants
      • Cylindrical Surrounding Double-Gate (CSDG) MOSFET
      • Fabrication
      • High-ƙ dielectrics
      • Microelectronics
      • Nanotechnology

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