Design of double-gate tri-active layer channel based IGZO thin-film transistor for improved performance of ultra-low-power RFID rectifier

Shashi K. Dargar*, Viranjay M. Srivastava

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    12 Citations (SciVal)
    Original languageEnglish
    Pages (from-to)194652-194662
    Number of pages11
    JournalIEEE Access
    Volume8
    DOIs
    Publication statusPublished (VoR) - 2020

    Keywords

    • Active layer channel
    • Amorphous IGZO
    • RFID
    • Thin-film transistors
    • VLSI

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