Design of double-gate tri-active layer channel based IGZO thin-film transistor for improved performance of ultra-low-power RFID rectifier

Shashi K. Dargar; Viranjay M. Srivastava

doi:10.1109/ACCESS.2020.3034031

Design of double-gate tri-active layer channel based IGZO thin-film transistor for improved performance of ultra-low-power RFID rectifier

Shashi K. Dargar^*, Viranjay M. Srivastava

^*Corresponding author for this work

University of KwaZulu-Natal

Research output: Contribution to journal › Article › peer-review

16 Citations (SciVal)

Original language	English
Pages (from-to)	194652-194662
Number of pages	11
Journal	IEEE Access
Volume	8
DOIs	https://doi.org/10.1109/ACCESS.2020.3034031
Publication status	Published (VoR) - 2020

Keywords

Active layer channel
Amorphous IGZO
RFID
Thin-film transistors
VLSI

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10.1109/ACCESS.2020.3034031

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title = "Design of double-gate tri-active layer channel based IGZO thin-film transistor for improved performance of ultra-low-power RFID rectifier",

keywords = "Active layer channel, Amorphous IGZO, RFID, Thin-film transistors, VLSI",

author = "Dargar, {Shashi K.} and Srivastava, {Viranjay M.}",

year = "2020",

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language = "English",

volume = "8",

pages = "194652--194662",

journal = "IEEE Access",

issn = "2169-3536",

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AU - Dargar, Shashi K.

AU - Srivastava, Viranjay M.

PY - 2020

Y1 - 2020

KW - Active layer channel

KW - Amorphous IGZO

KW - RFID

KW - Thin-film transistors

KW - VLSI

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JO - IEEE Access

JF - IEEE Access

ER -

Design of double-gate tri-active layer channel based IGZO thin-film transistor for improved performance of ultra-low-power RFID rectifier

Keywords

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