@inproceedings{171ae1dff1624e5883b52338b9e34398,
title = "Design of Hafnium Oxide (HfO2) Sidewall in InGaAs/InP for High-Speed Electronic Devices",
keywords = "Heterostructures, High-k dielectric, InAs, InGaAs, InP, MOSFETs, Nanotechnology, Semiconductor arbitrary alloys, Silicon, VLSI",
author = "Naveenbalaji Gowthaman and Srivastava, {Viranjay M.}",
note = "Publisher Copyright: {\textcopyright} 2022 Trans Tech Publications Ltd, Switzerland.; 5th International Conference on Materials Sciences and Nanomaterials, ICMSN 2021 and 4th International Conference on Advanced Composite Materials, ICACM 2021 ; Conference date: 25-08-2021 Through 27-08-2021",
year = "2022",
doi = "10.4028/www.scientific.net/KEM.907.10",
language = "English",
isbn = "9783035718942",
series = "Key Engineering Materials",
publisher = "Trans Tech Publications Ltd",
pages = "10--16",
editor = "Yuyuan Zhao",
booktitle = "Advanced Materials Science and Technologies II - Selected peer-reviewed full text papers from 5th International Conference on Materials Sciences and Nanomaterials, ICMSN 2021 and 4th International Conference on Advanced Composite Materials, ICACM 2021",
}