@inproceedings{804e94cbbb2645eea74bdf3265a23267,
title = "Design optimization of high-k dielectric based double-gate MOSFET and it's performance",
keywords = "Double-gate MOSFET, Hafnium di-oxide, High-k dielectric material, Nanotechnology, RF switch, VLSI",
author = "Srivastava, {Viranjay M.}",
note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 12th IEEE International Conference Electronics, Energy, Environment, Communication, Computer, Control, INDICON 2015 ; Conference date: 17-12-2015 Through 20-12-2015",
year = "2016",
month = mar,
day = "29",
doi = "10.1109/INDICON.2015.7443372",
language = "English",
series = "12th IEEE International Conference Electronics, Energy, Environment, Communication, Computer, Control: (E3-C3), INDICON 2015",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "12th IEEE International Conference Electronics, Energy, Environment, Communication, Computer, Control",
}