Design optimization of high-k dielectric based double-gate MOSFET and it's performance

Viranjay M. Srivastava*

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    Original languageEnglish
    Title of host publication12th IEEE International Conference Electronics, Energy, Environment, Communication, Computer, Control
    Subtitle of host publication(E3-C3), INDICON 2015
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    ISBN (Electronic)9781467373999
    DOIs
    Publication statusPublished (VoR) - 29 Mar 2016
    Event12th IEEE International Conference Electronics, Energy, Environment, Communication, Computer, Control, INDICON 2015 - New Delhi, India
    Duration: 17 Dec 201520 Dec 2015

    Publication series

    Name12th IEEE International Conference Electronics, Energy, Environment, Communication, Computer, Control: (E3-C3), INDICON 2015

    Conference

    Conference12th IEEE International Conference Electronics, Energy, Environment, Communication, Computer, Control, INDICON 2015
    Country/TerritoryIndia
    CityNew Delhi
    Period17/12/1520/12/15

    Keywords

    • Double-gate MOSFET
    • Hafnium di-oxide
    • High-k dielectric material
    • Nanotechnology
    • RF switch
    • VLSI

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