Designing parameters for RF CMOS

Viranjay M. Srivastava, K. S. Yadav, G. Singh

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    1 Citation (SciVal)
    Original languageEnglish
    Title of host publicationProceedings of the 2010 Annual IEEE India Conference
    Subtitle of host publicationGreen Energy, Computing and Communication, INDICON 2010
    DOIs
    Publication statusPublished (VoR) - 2010
    Event2010 Annual IEEE India Conference: Green Energy, Computing and Communication, INDICON 2010 - Kolkata, India
    Duration: 17 Dec 201019 Dec 2010

    Publication series

    NameProceedings of the 2010 Annual IEEE India Conference: Green Energy, Computing and Communication, INDICON 2010

    Conference

    Conference2010 Annual IEEE India Conference: Green Energy, Computing and Communication, INDICON 2010
    Country/TerritoryIndia
    CityKolkata
    Period17/12/1019/12/10

    Keywords

    • Cell Library
    • CMOS
    • CMOS Switch
    • Double-Gate MOSFET
    • Hafnium-dioxide
    • Radio Frequency
    • Resistance of MOS
    • RF Switch
    • VLSI
    • Voltage-Current Curve

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