Designing parameters for RF MOS cells

Viranjay M. Srivastava; G. Singh; K. S. Yadav

doi:10.1109/IECR.2010.5720126

Designing parameters for RF MOS cells

Viranjay M. Srivastava, G. Singh, K. S. Yadav

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Original language	English
Title of host publication	2010 International Conference on Industrial Electronics, Control and Robotics, IECR 2010
Pages	259-262
Number of pages	4
DOIs	https://doi.org/10.1109/IECR.2010.5720126
Publication status	Published (VoR) - 2010
Event	2010 International Conference on Industrial Electronics, Control and Robotics, IECR 2010 - Rourkela, India Duration: 27 Dec 2010 → 29 Dec 2010

Publication series

Name	2010 International Conference on Industrial Electronics, Control and Robotics, IECR 2010

Conference

Conference	2010 International Conference on Industrial Electronics, Control and Robotics, IECR 2010
Country/Territory	India
City	Rourkela
Period	27/12/10 → 29/12/10

Keywords

Cell Library
Contact resistance of MOS
MOSFET
Radio frequency
VLSI
Voltage-Current Curve

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10.1109/IECR.2010.5720126

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@inproceedings{ae41a04a4a35404980caed2a6ec201cd,

title = "Designing parameters for RF MOS cells",

keywords = "Cell Library, Contact resistance of MOS, MOSFET, Radio frequency, VLSI, Voltage-Current Curve",

author = "Srivastava, {Viranjay M.} and G. Singh and Yadav, {K. S.}",

year = "2010",

doi = "10.1109/IECR.2010.5720126",

language = "English",

isbn = "9781424485468",

series = "2010 International Conference on Industrial Electronics, Control and Robotics, IECR 2010",

pages = "259--262",

booktitle = "2010 International Conference on Industrial Electronics, Control and Robotics, IECR 2010",

note = "2010 International Conference on Industrial Electronics, Control and Robotics, IECR 2010 ; Conference date: 27-12-2010 Through 29-12-2010",

}

Srivastava, VM, Singh, G & Yadav, KS 2010, Designing parameters for RF MOS cells. in 2010 International Conference on Industrial Electronics, Control and Robotics, IECR 2010., 5720126, 2010 International Conference on Industrial Electronics, Control and Robotics, IECR 2010, pp. 259-262, 2010 International Conference on Industrial Electronics, Control and Robotics, IECR 2010, Rourkela, India, 27/12/10. https://doi.org/10.1109/IECR.2010.5720126

Designing parameters for RF MOS cells. / Srivastava, Viranjay M.; Singh, G.; Yadav, K. S.
2010 International Conference on Industrial Electronics, Control and Robotics, IECR 2010. 2010. p. 259-262 5720126 (2010 International Conference on Industrial Electronics, Control and Robotics, IECR 2010).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Designing parameters for RF MOS cells

AU - Srivastava, Viranjay M.

AU - Singh, G.

AU - Yadav, K. S.

PY - 2010

Y1 - 2010

KW - Cell Library

KW - Contact resistance of MOS

KW - MOSFET

KW - Radio frequency

KW - VLSI

KW - Voltage-Current Curve

UR - http://www.scopus.com/inward/record.url?scp=79952912492&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79952912492&partnerID=8YFLogxK

U2 - 10.1109/IECR.2010.5720126

DO - 10.1109/IECR.2010.5720126

M3 - Conference contribution

AN - SCOPUS:79952912492

SN - 9781424485468

T3 - 2010 International Conference on Industrial Electronics, Control and Robotics, IECR 2010

SP - 259

EP - 262

BT - 2010 International Conference on Industrial Electronics, Control and Robotics, IECR 2010

T2 - 2010 International Conference on Industrial Electronics, Control and Robotics, IECR 2010

Y2 - 27 December 2010 through 29 December 2010

ER -

Designing parameters for RF MOS cells

Publication series

Conference

Keywords

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