Dielectric Material (HfO2) Effect on Surface Potential for CSDG MOSFET

Mandisi Shunqukela, Viranjay M. Srivastava*

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    6 Citations (SciVal)
    Original languageEnglish
    Title of host publication2018 International Conference on Computer Communication and Informatics, ICCCI 2018
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    ISBN (Print)9781538622384
    DOIs
    Publication statusPublished (VoR) - 20 Aug 2018
    Event8th International Conference on Computer Communication and Informatics, ICCCI 2018 - Coimbatore, India
    Duration: 4 Jan 20186 Jan 2018

    Publication series

    Name2018 International Conference on Computer Communication and Informatics, ICCCI 2018

    Conference

    Conference8th International Conference on Computer Communication and Informatics, ICCCI 2018
    Country/TerritoryIndia
    CityCoimbatore
    Period4/01/186/01/18

    Keywords

    • CSDG MOSFET
    • Dielectric material
    • Double-gate MOSFET
    • Microelectronics
    • Nanotechnology
    • Surface potential
    • VLSI

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