Double-Pole Four-Throw RF Switch Based on Double-Gate MOSFET

Viranjay M. Srivastava; Ghanshyam Singh

doi:10.1007/978-3-319-01165-3_4

Double-Pole Four-Throw RF Switch Based on Double-Gate MOSFET

Viranjay M. Srivastava^*, Ghanshyam Singh

^*Corresponding author for this work

Jaypee University of Information Technology

Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review

Original language	English
Title of host publication	Analog Circuits and Signal Processing
Publisher	Springer
Pages	85-109
Number of pages	25
DOIs	https://doi.org/10.1007/978-3-319-01165-3_4
Publication status	Published (VoR) - 2014

Publication series

Name	Analog Circuits and Signal Processing
Volume	122
ISSN (Print)	1872-082X
ISSN (Electronic)	2197-1854

Keywords

Drain Current
Insertion Loss
Phase Noise
Return Loss
Switching Speed

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10.1007/978-3-319-01165-3_4

Cite this

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title = "Double-Pole Four-Throw RF Switch Based on Double-Gate MOSFET",

keywords = "Drain Current, Insertion Loss, Phase Noise, Return Loss, Switching Speed",

author = "Srivastava, {Viranjay M.} and Ghanshyam Singh",

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year = "2014",

doi = "10.1007/978-3-319-01165-3_4",

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KW - Drain Current

KW - Insertion Loss

KW - Phase Noise

KW - Return Loss

KW - Switching Speed

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DO - 10.1007/978-3-319-01165-3_4

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SP - 85

EP - 109

BT - Analog Circuits and Signal Processing

PB - Springer

ER -

Double-Pole Four-Throw RF Switch Based on Double-Gate MOSFET

Publication series

Keywords

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