Drain current and noise model of cylindrical surrounding double-gate MOSFET for RF switch

Viranjay M. Srivastava*, K. S. Yadav, G. Singh

*Corresponding author for this work

    Research output: Contribution to journalConference articlepeer-review

    23 Citations (SciVal)
    Original languageEnglish
    Pages (from-to)517-521
    Number of pages5
    JournalProcedia Engineering
    Volume38
    DOIs
    Publication statusPublished (VoR) - 2012
    EventInternational Conference on Modelling Optimization and Computing - TamilNadu, India
    Duration: 10 Apr 201211 Apr 2012

    Keywords

    • 45-nm technology
    • CMOS
    • Double-gate MOSFET
    • Single-gate MOSFET
    • VLSI

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