Drain current and noise model of cylindrical surrounding double-gate MOSFET for RF switch

Viranjay M. Srivastava; K. S. Yadav; G. Singh

doi:10.1016/j.proeng.2012.06.064

Drain current and noise model of cylindrical surrounding double-gate MOSFET for RF switch

Viranjay M. Srivastava^*
, K. S. Yadav
, G. Singh

^*Corresponding author for this work

Jaypee University of Information Technology
CSIR - Central Electronics Engineering Research Institute

Research output: Contribution to journal › Conference article › peer-review

25 Citations (SciVal)

Original language	English
Pages (from-to)	517-521
Number of pages	5
Journal	Procedia Engineering
Volume	38
DOIs	https://doi.org/10.1016/j.proeng.2012.06.064
Publication status	Published (VoR) - 2012
Event	International Conference on Modelling Optimization and Computing - TamilNadu, India Duration: 10 Apr 2012 → 11 Apr 2012

Keywords

45-nm technology
CMOS
Double-gate MOSFET
Single-gate MOSFET
VLSI

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10.1016/j.proeng.2012.06.064

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@article{9d54bd312aa9402e9f88b64c36dda29f,

title = "Drain current and noise model of cylindrical surrounding double-gate MOSFET for RF switch",

keywords = "45-nm technology, CMOS, Double-gate MOSFET, Single-gate MOSFET, VLSI",

author = "Srivastava, \{Viranjay M.\} and Yadav, \{K. S.\} and G. Singh",

year = "2012",

doi = "10.1016/j.proeng.2012.06.064",

language = "English",

volume = "38",

pages = "517--521",

journal = "Procedia Engineering",

issn = "1877-7058",

publisher = "Elsevier",

note = "International Conference on Modelling Optimization and Computing ; Conference date: 10-04-2012 Through 11-04-2012",

}

TY - JOUR

T1 - Drain current and noise model of cylindrical surrounding double-gate MOSFET for RF switch

AU - Srivastava, Viranjay M.

AU - Yadav, K. S.

AU - Singh, G.

PY - 2012

Y1 - 2012

KW - 45-nm technology

KW - CMOS

KW - Double-gate MOSFET

KW - Single-gate MOSFET

KW - VLSI

UR - https://www.scopus.com/pages/publications/84876285529

UR - https://www.scopus.com/pages/publications/84876285529#tab=citedBy

U2 - 10.1016/j.proeng.2012.06.064

DO - 10.1016/j.proeng.2012.06.064

M3 - Conference article

AN - SCOPUS:84876285529

SN - 1877-7058

VL - 38

SP - 517

EP - 521

JO - Procedia Engineering

JF - Procedia Engineering

T2 - International Conference on Modelling Optimization and Computing

Y2 - 10 April 2012 through 11 April 2012

ER -

Drain current and noise model of cylindrical surrounding double-gate MOSFET for RF switch

Keywords

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