Effect of threshold voltage on cylindrical surrounding double-gate MOSFET for wireless sensor networks RF switches

Viranjay M. Srivastava*

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    1 Citation (SciVal)
    Original languageEnglish
    Title of host publicationWorld Congress on Engineering, WCE 2014
    EditorsS. I. Ao, Jon Burgstone, S. I. Ao, Craig Douglas, Warren S. Grundfest, Craig Douglas, Jon Burgstone, S. I. Ao
    PublisherNewswood Limited
    Pages6-10
    Number of pages5
    ISBN (Electronic)9789881925206
    ISBN (Print)9789881925275
    Publication statusPublished (VoR) - 2014
    EventWorld Congress on Engineering and Computer Science 2014, WCECS 2014 - San Francisco, United States
    Duration: 22 Oct 201424 Oct 2014

    Publication series

    NameLecture Notes in Engineering and Computer Science
    Volume1
    ISSN (Print)2078-0958

    Conference

    ConferenceWorld Congress on Engineering and Computer Science 2014, WCECS 2014
    Country/TerritoryUnited States
    CitySan Francisco
    Period22/10/1424/10/14

    Keywords

    • CSDG MOSFET
    • DG MOSFET
    • HF switch
    • MIMO system
    • Threshold voltage
    • VLSI
    • Wfreless sensor networks

    Fingerprint

    Dive into the research topics of 'Effect of threshold voltage on cylindrical surrounding double-gate MOSFET for wireless sensor networks RF switches'. Together they form a unique fingerprint.

    Cite this