Effects of downscaling channel dimensions on electrical characteristics of InAs-FinFET transistor

Ahmed Mahmood, Waheb A. Jabbar*, Yasir Hashim, Hadi Bin Manap

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    8 Citations (SciVal)

    Abstract

    In this paper, we present the impact of downscaling of nano-channel dimensions of Indium Arsenide Fin Feld Effect Transistor (InAs- FinFET) on electrical characteristics of the transistor, in particular; (i) ION/IOFF ratio, (ii) Subthreshold Swing (SS), Threshold voltage (VT), and Drain-induced barrier lowering (DIBL). MuGFET simulation tool was utilized to simulate and compare the considered characteristics based on variable channel dimensions: length, width and oxide thickness. The results demonstrate that the best performance of InAs- FinFET was achieved with channel length = 25 nm, width= 5 nm, and oxide thickness between 1.5 to 2.5 nm according to the selected scaling factor (K = 0.125).
    Original languageEnglish
    Pages (from-to)2902-2909
    Number of pages8
    JournalInternational Journal of Electrical and Computer Engineering
    Volume9
    Issue number4
    DOIs
    Publication statusPublished (VoR) - 2019

    Funding

    The research was supported by the Ministry FRGS/1/2018/TK04/UMP/02/11 (RDU190133). The research was supported by the Ministry of Education Malaysia under Grant scheme No. FRGS/1/2018/TK04/UMP/02/11 (RDU190133).

    FundersFunder number
    Ministry of Higher Education, MalaysiaFRGS/1/2018/TK04/UMP/02/11, RDU190133

      Keywords

      • Channel dimensions
      • ION/IOFF ratio
      • InAs- FinFET
      • MuGFET
      • Subthreshold swing

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