Effects of downscaling channel dimensions on electrical characteristics of InAs-FinFET transistor

Ahmed Mahmood; Waheb A. Jabbar; Yasir Hashim; Hadi Bin Manap

doi:10.11591/ijece.v9i4.pp2902-2909

Effects of downscaling channel dimensions on electrical characteristics of InAs-FinFET transistor

Ahmed Mahmood, Waheb A. Jabbar^*, Yasir Hashim, Hadi Bin Manap

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

11 Citations (SciVal)

Abstract

In this paper, we present the impact of downscaling of nano-channel dimensions of Indium Arsenide Fin Feld Effect Transistor (InAs- FinFET) on electrical characteristics of the transistor, in particular; (i) ION/IOFF ratio, (ii) Subthreshold Swing (SS), Threshold voltage (VT), and Drain-induced barrier lowering (DIBL). MuGFET simulation tool was utilized to simulate and compare the considered characteristics based on variable channel dimensions: length, width and oxide thickness. The results demonstrate that the best performance of InAs- FinFET was achieved with channel length = 25 nm, width= 5 nm, and oxide thickness between 1.5 to 2.5 nm according to the selected scaling factor (K = 0.125).

Original language	English
Pages (from-to)	2902-2909
Number of pages	8
Journal	International Journal of Electrical and Computer Engineering
Volume	9
Issue number	4
DOIs	https://doi.org/10.11591/ijece.v9i4.pp2902-2909 https://doi.org/10.11591/ijece.v9i4.pp2902-2909
Publication status	Published (VoR) - 2019

Funding

The research was supported by the Ministry FRGS/1/2018/TK04/UMP/02/11 (RDU190133). The research was supported by the Ministry of Education Malaysia under Grant scheme No. FRGS/1/2018/TK04/UMP/02/11 (RDU190133).

Funders	Funder number
Ministry of Higher Education, Malaysia	FRGS/1/2018/TK04/UMP/02/11, RDU190133

Keywords

Channel dimensions
ION/IOFF ratio
InAs- FinFET
MuGFET
Subthreshold swing

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title = "Effects of downscaling channel dimensions on electrical characteristics of InAs-FinFET transistor",

abstract = "In this paper, we present the impact of downscaling of nano-channel dimensions of Indium Arsenide Fin Feld Effect Transistor (InAs- FinFET) on electrical characteristics of the transistor, in particular; (i) ION/IOFF ratio, (ii) Subthreshold Swing (SS), Threshold voltage (VT), and Drain-induced barrier lowering (DIBL). MuGFET simulation tool was utilized to simulate and compare the considered characteristics based on variable channel dimensions: length, width and oxide thickness. The results demonstrate that the best performance of InAs- FinFET was achieved with channel length = 25 nm, width= 5 nm, and oxide thickness between 1.5 to 2.5 nm according to the selected scaling factor (K = 0.125).",

keywords = "Channel dimensions, ION/IOFF ratio, InAs- FinFET, MuGFET, Subthreshold swing",

author = "Ahmed Mahmood and Jabbar, {Waheb A.} and Yasir Hashim and Manap, {Hadi Bin}",

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AU - Mahmood, Ahmed

AU - Jabbar, Waheb A.

AU - Hashim, Yasir

AU - Manap, Hadi Bin

PY - 2019

Y1 - 2019

N2 - In this paper, we present the impact of downscaling of nano-channel dimensions of Indium Arsenide Fin Feld Effect Transistor (InAs- FinFET) on electrical characteristics of the transistor, in particular; (i) ION/IOFF ratio, (ii) Subthreshold Swing (SS), Threshold voltage (VT), and Drain-induced barrier lowering (DIBL). MuGFET simulation tool was utilized to simulate and compare the considered characteristics based on variable channel dimensions: length, width and oxide thickness. The results demonstrate that the best performance of InAs- FinFET was achieved with channel length = 25 nm, width= 5 nm, and oxide thickness between 1.5 to 2.5 nm according to the selected scaling factor (K = 0.125).

AB - In this paper, we present the impact of downscaling of nano-channel dimensions of Indium Arsenide Fin Feld Effect Transistor (InAs- FinFET) on electrical characteristics of the transistor, in particular; (i) ION/IOFF ratio, (ii) Subthreshold Swing (SS), Threshold voltage (VT), and Drain-induced barrier lowering (DIBL). MuGFET simulation tool was utilized to simulate and compare the considered characteristics based on variable channel dimensions: length, width and oxide thickness. The results demonstrate that the best performance of InAs- FinFET was achieved with channel length = 25 nm, width= 5 nm, and oxide thickness between 1.5 to 2.5 nm according to the selected scaling factor (K = 0.125).

KW - Channel dimensions

KW - ION/IOFF ratio

KW - InAs- FinFET

KW - MuGFET

KW - Subthreshold swing

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JO - International Journal of Electrical and Computer Engineering

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Effects of downscaling channel dimensions on electrical characteristics of InAs-FinFET transistor

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