Abstract
In this paper, we present the impact of downscaling of nano-channel dimensions of Indium Arsenide Fin Feld Effect Transistor (InAs- FinFET) on electrical characteristics of the transistor, in particular; (i) ION/IOFF ratio, (ii) Subthreshold Swing (SS), Threshold voltage (VT), and Drain-induced barrier lowering (DIBL). MuGFET simulation tool was utilized to simulate and compare the considered characteristics based on variable channel dimensions: length, width and oxide thickness. The results demonstrate that the best performance of InAs- FinFET was achieved with channel length = 25 nm, width= 5 nm, and oxide thickness between 1.5 to 2.5 nm according to the selected scaling factor (K = 0.125).
| Original language | English |
|---|---|
| Pages (from-to) | 2902-2909 |
| Number of pages | 8 |
| Journal | International Journal of Electrical and Computer Engineering |
| Volume | 9 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published (VoR) - 2019 |
Funding
The research was supported by the Ministry FRGS/1/2018/TK04/UMP/02/11 (RDU190133). The research was supported by the Ministry of Education Malaysia under Grant scheme No. FRGS/1/2018/TK04/UMP/02/11 (RDU190133).
| Funders | Funder number |
|---|---|
| Ministry of Higher Education, Malaysia | FRGS/1/2018/TK04/UMP/02/11, RDU190133 |
Keywords
- Channel dimensions
- ION/IOFF ratio
- InAs- FinFET
- MuGFET
- Subthreshold swing