Electrical characteristic analysis of Al0.43Ga0.57As cylindrical surrounding double-gate (CSDG) MOSFET: A nano-material sensing approach with fabrication technology

Naveenbalaji Gowthaman*, Viranjay M. Srivastava

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    1 Citation (SciVal)
    Original languageEnglish
    Pages (from-to)37522-37531
    Number of pages10
    JournalInternational Journal of Hydrogen Energy
    Volume48
    Issue number96
    DOIs
    Publication statusPublished (VoR) - 12 Dec 2023

    Keywords

    • Cylindrical structure
    • High electron mobility transistors (HEMTs)
    • Hydrogen sensing
    • Microelectronics
    • MOSFET

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