Hafnium Dioxide-Based Double-Pole Four-Throw Double-Gate RF CMOS Switch

Viranjay M. Srivastava; Ghanshyam Singh

doi:10.1007/978-3-319-01165-3_6

Hafnium Dioxide-Based Double-Pole Four-Throw Double-Gate RF CMOS Switch

Viranjay M. Srivastava^*, Ghanshyam Singh

^*Corresponding author for this work

Jaypee University of Information Technology

Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review

1 Citation (SciVal)

Original language	English
Title of host publication	Analog Circuits and Signal Processing
Publisher	Springer
Pages	143-163
Number of pages	21
DOIs	https://doi.org/10.1007/978-3-319-01165-3_6
Publication status	Published (VoR) - 2014

Publication series

Name	Analog Circuits and Signal Processing
Volume	122
ISSN (Print)	1872-082X
ISSN (Electronic)	2197-1854

Keywords

Back Gate
Debye Length
Drain Current
HfO2 Film
Threshold Voltage

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10.1007/978-3-319-01165-3_6

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title = "Hafnium Dioxide-Based Double-Pole Four-Throw Double-Gate RF CMOS Switch",

keywords = "Back Gate, Debye Length, Drain Current, HfO2 Film, Threshold Voltage",

author = "Srivastava, {Viranjay M.} and Ghanshyam Singh",

note = "Publisher Copyright: {\textcopyright} 2014, Springer International Publishing Switzerland.",

year = "2014",

doi = "10.1007/978-3-319-01165-3_6",

language = "English",

series = "Analog Circuits and Signal Processing",

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T1 - Hafnium Dioxide-Based Double-Pole Four-Throw Double-Gate RF CMOS Switch

AU - Srivastava, Viranjay M.

AU - Singh, Ghanshyam

PY - 2014

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KW - Back Gate

KW - Debye Length

KW - Drain Current

KW - HfO2 Film

KW - Threshold Voltage

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T3 - Analog Circuits and Signal Processing

SP - 143

EP - 163

BT - Analog Circuits and Signal Processing

PB - Springer

ER -

Hafnium Dioxide-Based Double-Pole Four-Throw Double-Gate RF CMOS Switch

Publication series

Keywords

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