@inproceedings{36cb0b4c96b342f88d8d846d4c386a39,
title = "Impact of Oxide Thickness Fluctuation for Resist- and Spacer-Defined FinFETs",
keywords = "FinFET, Microelectronics, Nanotechnology, Oxide thickness variation, Resist-defined, Spacer-defined, VLSI",
author = "Rathore, {Rituraj S.} and Rana, {Ashwani K.} and Srivastava, {Viranjay M.}",
note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 IEEE Latin America Electron Devices Conference, LAEDC 2022 ; Conference date: 04-07-2022 Through 06-07-2022",
year = "2022",
doi = "10.1109/LAEDC54796.2022.9908194",
language = "English",
series = "2022 IEEE Latin America Electron Devices Conference, LAEDC 2022",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2022 IEEE Latin America Electron Devices Conference, LAEDC 2022",
}