Impact of Oxide Thickness Fluctuation for Resist- and Spacer-Defined FinFETs

Rituraj S. Rathore, Ashwani K. Rana, Viranjay M. Srivastava

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    1 Citation (SciVal)
    Original languageEnglish
    Title of host publication2022 IEEE Latin America Electron Devices Conference, LAEDC 2022
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    ISBN (Electronic)9781665497671
    DOIs
    Publication statusPublished (VoR) - 2022
    Event2022 IEEE Latin America Electron Devices Conference, LAEDC 2022 - Cancun, Mexico
    Duration: 4 Jul 20226 Jul 2022

    Publication series

    Name2022 IEEE Latin America Electron Devices Conference, LAEDC 2022

    Conference

    Conference2022 IEEE Latin America Electron Devices Conference, LAEDC 2022
    Country/TerritoryMexico
    CityCancun
    Period4/07/226/07/22

    Keywords

    • FinFET
    • Microelectronics
    • Nanotechnology
    • Oxide thickness variation
    • Resist-defined
    • Spacer-defined
    • VLSI

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