Influence of Dielectrics and Channel Defects on the Electrical Performance of Oxide-based p-Channel TFTs for CMOS Applications

Viswanath G. Akkili, R. Thangavel, Viranjay M. Srivastava

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    6 Citations (SciVal)
    Original languageEnglish
    Title of host publicationLAEDC 2021 - IEEE Latin America Electron Devices Conference
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    ISBN (Electronic)9781665415101
    DOIs
    Publication statusPublished (VoR) - 19 Apr 2021
    Event3rd IEEE Latin America Electron Devices Conference, LAEDC 2021 - Mexico, Mexico
    Duration: 19 Apr 202121 Apr 2021

    Publication series

    NameLAEDC 2021 - IEEE Latin America Electron Devices Conference

    Conference

    Conference3rd IEEE Latin America Electron Devices Conference, LAEDC 2021
    Country/TerritoryMexico
    CityMexico
    Period19/04/2121/04/21

    Keywords

    • 2D numerical simulation
    • Channel defects
    • Dielectrics
    • p-Type TFT
    • Sno

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