Influence of Dielectrics and Channel Defects on the Electrical Performance of Oxide-based p-Channel TFTs for CMOS Applications

Viswanath G. Akkili; R. Thangavel; Viranjay M. Srivastava

doi:10.1109/LAEDC51812.2021.9437916

Influence of Dielectrics and Channel Defects on the Electrical Performance of Oxide-based p-Channel TFTs for CMOS Applications

Viswanath G. Akkili, R. Thangavel, Viranjay M. Srivastava

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

6 Citations (SciVal)

Original language	English
Title of host publication	LAEDC 2021 - IEEE Latin America Electron Devices Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781665415101
DOIs	https://doi.org/10.1109/LAEDC51812.2021.9437916
Publication status	Published (VoR) - 19 Apr 2021
Event	3rd IEEE Latin America Electron Devices Conference, LAEDC 2021 - Mexico, Mexico Duration: 19 Apr 2021 → 21 Apr 2021

Publication series

Name	LAEDC 2021 - IEEE Latin America Electron Devices Conference

Conference

Conference	3rd IEEE Latin America Electron Devices Conference, LAEDC 2021
Country/Territory	Mexico
City	Mexico
Period	19/04/21 → 21/04/21

Funding

DST-Government of India under the Young scientist grant no: SR/FTP/PS-184/2012. This work was carried out within the framework of Department of Science and Technology, Govt. of India project under the young scientist grant No SR/FTP/PS – 184/2012, SERB vide Dy. No SERB/f/5439/2013-14.

Keywords

2D numerical simulation
Channel defects
Dielectrics
p-Type TFT
Sno

Access to Document

10.1109/LAEDC51812.2021.9437916

Cite this

Akkili, V. G., Thangavel, R., & Srivastava, V. M. (2021). Influence of Dielectrics and Channel Defects on the Electrical Performance of Oxide-based p-Channel TFTs for CMOS Applications. In LAEDC 2021 - IEEE Latin America Electron Devices Conference Article 9437916 (LAEDC 2021 - IEEE Latin America Electron Devices Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/LAEDC51812.2021.9437916

Akkili, Viswanath G. ; Thangavel, R. ; Srivastava, Viranjay M. / Influence of Dielectrics and Channel Defects on the Electrical Performance of Oxide-based p-Channel TFTs for CMOS Applications. LAEDC 2021 - IEEE Latin America Electron Devices Conference. Institute of Electrical and Electronics Engineers Inc., 2021. (LAEDC 2021 - IEEE Latin America Electron Devices Conference).

@inproceedings{318eadb8fd844fb2b27bb37638a03d01,

title = "Influence of Dielectrics and Channel Defects on the Electrical Performance of Oxide-based p-Channel TFTs for CMOS Applications",

keywords = "2D numerical simulation, Channel defects, Dielectrics, p-Type TFT, Sno",

author = "Akkili, \{Viswanath G.\} and R. Thangavel and Srivastava, \{Viranjay M.\}",

note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 3rd IEEE Latin America Electron Devices Conference, LAEDC 2021 ; Conference date: 19-04-2021 Through 21-04-2021",

year = "2021",

month = apr,

day = "19",

doi = "10.1109/LAEDC51812.2021.9437916",

language = "English",

series = "LAEDC 2021 - IEEE Latin America Electron Devices Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "LAEDC 2021 - IEEE Latin America Electron Devices Conference",

}

Akkili, VG, Thangavel, R & Srivastava, VM 2021, Influence of Dielectrics and Channel Defects on the Electrical Performance of Oxide-based p-Channel TFTs for CMOS Applications. in LAEDC 2021 - IEEE Latin America Electron Devices Conference., 9437916, LAEDC 2021 - IEEE Latin America Electron Devices Conference, Institute of Electrical and Electronics Engineers Inc., 3rd IEEE Latin America Electron Devices Conference, LAEDC 2021, Mexico, Mexico, 19/04/21. https://doi.org/10.1109/LAEDC51812.2021.9437916

Influence of Dielectrics and Channel Defects on the Electrical Performance of Oxide-based p-Channel TFTs for CMOS Applications. / Akkili, Viswanath G.; Thangavel, R.; Srivastava, Viranjay M.
LAEDC 2021 - IEEE Latin America Electron Devices Conference. Institute of Electrical and Electronics Engineers Inc., 2021. 9437916 (LAEDC 2021 - IEEE Latin America Electron Devices Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Influence of Dielectrics and Channel Defects on the Electrical Performance of Oxide-based p-Channel TFTs for CMOS Applications

AU - Akkili, Viswanath G.

AU - Thangavel, R.

AU - Srivastava, Viranjay M.

PY - 2021/4/19

Y1 - 2021/4/19

KW - 2D numerical simulation

KW - Channel defects

KW - Dielectrics

KW - p-Type TFT

KW - Sno

UR - https://www.scopus.com/pages/publications/85108225486

UR - https://www.scopus.com/inward/citedby.url?scp=85108225486&partnerID=8YFLogxK

U2 - 10.1109/LAEDC51812.2021.9437916

DO - 10.1109/LAEDC51812.2021.9437916

M3 - Conference contribution

AN - SCOPUS:85108225486

T3 - LAEDC 2021 - IEEE Latin America Electron Devices Conference

BT - LAEDC 2021 - IEEE Latin America Electron Devices Conference

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 3rd IEEE Latin America Electron Devices Conference, LAEDC 2021

Y2 - 19 April 2021 through 21 April 2021

ER -

Akkili VG, Thangavel R, Srivastava VM. Influence of Dielectrics and Channel Defects on the Electrical Performance of Oxide-based p-Channel TFTs for CMOS Applications. In LAEDC 2021 - IEEE Latin America Electron Devices Conference. Institute of Electrical and Electronics Engineers Inc. 2021. 9437916. (LAEDC 2021 - IEEE Latin America Electron Devices Conference). doi: 10.1109/LAEDC51812.2021.9437916

Influence of Dielectrics and Channel Defects on the Electrical Performance of Oxide-based p-Channel TFTs for CMOS Applications

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Keywords

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