Investigations on Cylindrical Surrounding Double-gate (CSDG) Mosfet using ALXGA1-XAS/INP: PT with LA2O3 Oxide Layer for Fabrication

Naveenbalaji Gowthaman; Viranjay M. Srivastava

doi:10.2174/1872210517666230427163447

Investigations on Cylindrical Surrounding Double-gate (CSDG) Mosfet using AL_XGA_1-XAS/INP: PT with LA₂O₃ Oxide Layer for Fabrication

Naveenbalaji Gowthaman^*, Viranjay M. Srivastava

^*Corresponding author for this work

University of KwaZulu-Natal

Research output: Contribution to journal › Article › peer-review

1 Citation (SciVal)

Original language	English
Pages (from-to)	374-785
Number of pages	412
Journal	Recent Patents on Nanotechnology
Volume	18
Issue number	3
DOIs	https://doi.org/10.2174/1872210517666230427163447
Publication status	Published (VoR) - 2024

Keywords

Arbitrary alloys
CSDG MOSFET
high-ƙ dielectrics
low power/energy
microelectronics
nanomaterials
semiconductors
VLSI

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10.2174/1872210517666230427163447

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title = "Investigations on Cylindrical Surrounding Double-gate (CSDG) Mosfet using ALXGA1-XAS/INP: PT with LA2O3 Oxide Layer for Fabrication",

keywords = "Arbitrary alloys, CSDG MOSFET, high-ƙ dielectrics, low power/energy, microelectronics, nanomaterials, semiconductors, VLSI",

author = "Naveenbalaji Gowthaman and Srivastava, {Viranjay M.}",

note = "Publisher Copyright: {\textcopyright} 2024 Bentham Science Publishers.",

year = "2024",

doi = "10.2174/1872210517666230427163447",

language = "English",

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publisher = "Bentham Science Publishers",

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T2 - PT with LA2O3 Oxide Layer for Fabrication

AU - Gowthaman, Naveenbalaji

AU - Srivastava, Viranjay M.

PY - 2024

Y1 - 2024

KW - Arbitrary alloys

KW - CSDG MOSFET

KW - high-ƙ dielectrics

KW - low power/energy

KW - microelectronics

KW - nanomaterials

KW - semiconductors

KW - VLSI

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U2 - 10.2174/1872210517666230427163447

DO - 10.2174/1872210517666230427163447

M3 - Article

AN - SCOPUS:85179331278

SN - 1872-2105

VL - 18

SP - 374

EP - 785

JO - Recent Patents on Nanotechnology

JF - Recent Patents on Nanotechnology

IS - 3

ER -

Investigations on Cylindrical Surrounding Double-gate (CSDG) Mosfet using AL_XGA_1-XAS/INP: PT with LA₂O₃ Oxide Layer for Fabrication

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