Mathematical Modeling of Drain Current Estimation in a CSDG MOSFET, Based on La2O3 Oxide Layer with Fabrication—A Nanomaterial Approach

Naveenbalaji Gowthaman; Viranjay M. Srivastava

doi:10.3390/nano12193374

Mathematical Modeling of Drain Current Estimation in a CSDG MOSFET, Based on La₂O₃ Oxide Layer with Fabrication—A Nanomaterial Approach

Naveenbalaji Gowthaman^*, Viranjay M. Srivastava

^*Corresponding author for this work

University of KwaZulu-Natal

Research output: Contribution to journal › Article › peer-review

12 Citations (SciVal)

Original language	English
Article number	3374
Journal	Nanomaterials
Volume	12
Issue number	19
DOIs	https://doi.org/10.3390/nano12193374
Publication status	Published (VoR) - Oct 2022

Keywords

CSDG MOSFET
cylindrical structure
double-gate MOSFET
drain current
material properties
microelectronics
nanotechnology
semiconductor
VLSI

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10.3390/nano12193374

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title = "Mathematical Modeling of Drain Current Estimation in a CSDG MOSFET, Based on La2O3 Oxide Layer with Fabrication—A Nanomaterial Approach",

keywords = "CSDG MOSFET, cylindrical structure, double-gate MOSFET, drain current, material properties, microelectronics, nanotechnology, semiconductor, VLSI",

author = "Naveenbalaji Gowthaman and Srivastava, {Viranjay M.}",

note = "Publisher Copyright: {\textcopyright} 2022 by the authors.",

year = "2022",

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doi = "10.3390/nano12193374",

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volume = "12",

journal = "Nanomaterials",

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AU - Gowthaman, Naveenbalaji

AU - Srivastava, Viranjay M.

PY - 2022/10

Y1 - 2022/10

KW - CSDG MOSFET

KW - cylindrical structure

KW - double-gate MOSFET

KW - drain current

KW - material properties

KW - microelectronics

KW - nanotechnology

KW - semiconductor

KW - VLSI

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DO - 10.3390/nano12193374

M3 - Article

AN - SCOPUS:85139740783

SN - 2079-4991

VL - 12

JO - Nanomaterials

JF - Nanomaterials

IS - 19

M1 - 3374

ER -

Mathematical Modeling of Drain Current Estimation in a CSDG MOSFET, Based on La₂O₃ Oxide Layer with Fabrication—A Nanomaterial Approach

Keywords

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