TY - JOUR
T1 - Mathematical modeling of electron density arrangement in CSDG MOSFET
T2 - a nano-material approach
AU - Gowthaman, Naveenbalaji
AU - Srivastava, Viranjay M.
N1 - Publisher Copyright:
© 2021, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature.
PY - 2022/5
Y1 - 2022/5
UR - https://www.scopus.com/pages/publications/85122304735
UR - https://www.scopus.com/pages/publications/85122304735#tab=citedBy
U2 - 10.1007/s10853-021-06717-0
DO - 10.1007/s10853-021-06717-0
M3 - Article
AN - SCOPUS:85122304735
SN - 0022-2461
VL - 57
SP - 8381
EP - 8392
JO - Journal of Materials Science
JF - Journal of Materials Science
IS - 18
ER -