Mathematical modeling of electron density arrangement in CSDG MOSFET: a nano-material approach

Naveenbalaji Gowthaman; Viranjay M. Srivastava

doi:10.1007/s10853-021-06717-0

Mathematical modeling of electron density arrangement in CSDG MOSFET: a nano-material approach

Naveenbalaji Gowthaman^*, Viranjay M. Srivastava

^*Corresponding author for this work

University of KwaZulu-Natal

Research output: Contribution to journal › Article › peer-review

10 Citations (SciVal)

Original language	English
Pages (from-to)	8381-8392
Number of pages	12
Journal	Journal of Materials Science
Volume	57
Issue number	18
DOIs	https://doi.org/10.1007/s10853-021-06717-0
Publication status	Published (VoR) - May 2022

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title = "Mathematical modeling of electron density arrangement in CSDG MOSFET: a nano-material approach",

author = "Naveenbalaji Gowthaman and Srivastava, \{Viranjay M.\}",

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Mathematical modeling of electron density arrangement in CSDG MOSFET: a nano-material approach

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