Optimal Nano-Dimensional Channel of GaAs-FinFET Transistor

Ahmed Mahmood, Waheb A. Jabbar, Wasan Kadhim Saad, Yasir Hashim, Hadi Bin Manap

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    4 Citations (SciVal)

    Abstract

    This paper investigates the optimal nano-dimensions channel for Gallium Arsenide Fin Field Effect Transistor (GaAs-FinFET) based on ION/IOFF ratio and subthreshold swing (SS). The impact of reducing channel dimensions (length, width, and oxide thickness) on GaAs-FinFET performance has been evaluated in terms of various electrical characteristics (ION/IOFF, SS, VT and DIBL). The MuGFET simulation tool is used in this study to simulate the current-voltage characteristics for different dimensions of channel. According to highest ION/IOFF ratio, and nearest SS to the ideal SS, the best channel dimensions of GaAs-FinFET are designed. The results show that the best performance can be achieved with the lowest scaling factor, K of 0.25, when the length is 40 nm, the width is 3 nm, and the oxide thickness is 1 nm.
    Original languageEnglish
    Title of host publication2018 IEEE 16th Student Conference on Research and Development, SCOReD 2018
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    ISBN (Electronic)9781538691755
    ISBN (Print)9781538691755
    DOIs
    Publication statusPublished (VoR) - 2 Jul 2018
    Event16th IEEE Student Conference on Research and Development, SCOReD 2018 - Selangor, Malaysia
    Duration: 26 Nov 201828 Nov 2018

    Publication series

    Name2018 IEEE 16th Student Conference on Research and Development, SCOReD 2018

    Conference

    Conference16th IEEE Student Conference on Research and Development, SCOReD 2018
    Country/TerritoryMalaysia
    CitySelangor
    Period26/11/1828/11/18

    Funding

    ACKNOWLEDGMENT The research was supported in part by the Universiti Malaysia Pahang (Grant scheme No. RDU170309) and in part by Al-Furat Al-Awsat Technical University, Engineering Technical College-Najaf.

    FundersFunder number
    Al-Furat Al-Awsat Technical University
    Engineering Technical College-Najaf
    Universiti Malaysia PahangRDU170309

      Keywords

      • FinFET
      • ION/IOFF ratio
      • subthreshold swing

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