TY - GEN
T1 - Optimal Nano-Dimensional Channel of GaAs-FinFET Transistor
AU - Mahmood, Ahmed
AU - Jabbar, Waheb A.
AU - Saad, Wasan Kadhim
AU - Hashim, Yasir
AU - Bin Manap, Hadi
N1 - Publisher Copyright:
© 2018 IEEE.
PY - 2018/7/2
Y1 - 2018/7/2
N2 - This paper investigates the optimal nano-dimensions channel for Gallium Arsenide Fin Field Effect Transistor (GaAs-FinFET) based on ION/IOFF ratio and subthreshold swing (SS). The impact of reducing channel dimensions (length, width, and oxide thickness) on GaAs-FinFET performance has been evaluated in terms of various electrical characteristics (ION/IOFF, SS, VT and DIBL). The MuGFET simulation tool is used in this study to simulate the current-voltage characteristics for different dimensions of channel. According to highest ION/IOFF ratio, and nearest SS to the ideal SS, the best channel dimensions of GaAs-FinFET are designed. The results show that the best performance can be achieved with the lowest scaling factor, K of 0.25, when the length is 40 nm, the width is 3 nm, and the oxide thickness is 1 nm.
AB - This paper investigates the optimal nano-dimensions channel for Gallium Arsenide Fin Field Effect Transistor (GaAs-FinFET) based on ION/IOFF ratio and subthreshold swing (SS). The impact of reducing channel dimensions (length, width, and oxide thickness) on GaAs-FinFET performance has been evaluated in terms of various electrical characteristics (ION/IOFF, SS, VT and DIBL). The MuGFET simulation tool is used in this study to simulate the current-voltage characteristics for different dimensions of channel. According to highest ION/IOFF ratio, and nearest SS to the ideal SS, the best channel dimensions of GaAs-FinFET are designed. The results show that the best performance can be achieved with the lowest scaling factor, K of 0.25, when the length is 40 nm, the width is 3 nm, and the oxide thickness is 1 nm.
KW - FinFET
KW - ION/IOFF ratio
KW - subthreshold swing
UR - http://www.scopus.com/inward/record.url?scp=85066467881&partnerID=8YFLogxK
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U2 - 10.1109/SCORED.2018.8710811
DO - 10.1109/SCORED.2018.8710811
M3 - Conference contribution
SN - 9781538691755
T3 - 2018 IEEE 16th Student Conference on Research and Development, SCOReD 2018
BT - 2018 IEEE 16th Student Conference on Research and Development, SCOReD 2018
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 16th IEEE Student Conference on Research and Development, SCOReD 2018
Y2 - 26 November 2018 through 28 November 2018
ER -