Parametric Analysis of CSDG MOSFET with La2O3Gate Oxide: Based on Electrical Field Estimation

Naveenbalaji Gowthaman; Viranjay M. Srivastava

doi:10.1109/ACCESS.2021.3131980

Parametric Analysis of CSDG MOSFET with La₂O₃Gate Oxide: Based on Electrical Field Estimation

Naveenbalaji Gowthaman^*, Viranjay M. Srivastava

^*Corresponding author for this work

University of KwaZulu-Natal

Research output: Contribution to journal › Article › peer-review

10 Citations (SciVal)

Original language	English
Pages (from-to)	159421-159431
Number of pages	11
Journal	IEEE Access
Volume	9
DOIs	https://doi.org/10.1109/ACCESS.2021.3131980
Publication status	Published (VoR) - 2021

Keywords

cylindrical structure
Cylindrical surrounding double-gate (CSDG) MOSFET
double-gate (DG) MOSFET
high-speed devices
high-ƙ dielectric
microelectronics
nanotechnology
VLSI

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10.1109/ACCESS.2021.3131980

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@article{d0b4e0490c9a4435ac5660f9d58b7bce,

title = "Parametric Analysis of CSDG MOSFET with La2O3Gate Oxide: Based on Electrical Field Estimation",

keywords = "cylindrical structure, Cylindrical surrounding double-gate (CSDG) MOSFET, double-gate (DG) MOSFET, high-speed devices, high-ƙ dielectric, microelectronics, nanotechnology, VLSI",

author = "Naveenbalaji Gowthaman and Srivastava, {Viranjay M.}",

note = "Publisher Copyright: {\textcopyright} 2013 IEEE.",

year = "2021",

doi = "10.1109/ACCESS.2021.3131980",

language = "English",

volume = "9",

pages = "159421--159431",

journal = "IEEE Access",

issn = "2169-3536",

publisher = "IEEE",

}

TY - JOUR

T1 - Parametric Analysis of CSDG MOSFET with La2O3Gate Oxide

T2 - Based on Electrical Field Estimation

AU - Gowthaman, Naveenbalaji

AU - Srivastava, Viranjay M.

PY - 2021

Y1 - 2021

KW - cylindrical structure

KW - Cylindrical surrounding double-gate (CSDG) MOSFET

KW - double-gate (DG) MOSFET

KW - high-speed devices

KW - high-ƙ dielectric

KW - microelectronics

KW - nanotechnology

KW - VLSI

UR - http://www.scopus.com/inward/record.url?scp=85120541688&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85120541688&partnerID=8YFLogxK

U2 - 10.1109/ACCESS.2021.3131980

DO - 10.1109/ACCESS.2021.3131980

M3 - Article

AN - SCOPUS:85120541688

SN - 2169-3536

VL - 9

SP - 159421

EP - 159431

JO - IEEE Access

JF - IEEE Access

ER -

Parametric Analysis of CSDG MOSFET with La₂O₃Gate Oxide: Based on Electrical Field Estimation

Keywords

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