Parametric Analysis of Indium Gallium Arsenide Wafer-based Thin Body (5 nm) Double-gate MOSFETs for Hybrid RF Applications

Pattunnarajam Paramasivam; Naveenbalaji Gowthaman; Viranjay M. Srivastava

doi:10.2174/1872210517666230602095347

Parametric Analysis of Indium Gallium Arsenide Wafer-based Thin Body (5 nm) Double-gate MOSFETs for Hybrid RF Applications

Pattunnarajam Paramasivam, Naveenbalaji Gowthaman, Viranjay M. Srivastava

Research output: Contribution to journal › Article › peer-review

2 Citations (SciVal)

Original language	English
Pages (from-to)	335-349
Number of pages	15
Journal	Recent Patents on Nanotechnology
Volume	18
Issue number	3
DOIs	https://doi.org/10.2174/1872210517666230602095347
Publication status	Published (VoR) - 2024

Keywords

Fermi-dirac statistics
flat-band voltage
microelectronics
nanotechnologies
NEGF
VLSI.

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10.2174/1872210517666230602095347

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title = "Parametric Analysis of Indium Gallium Arsenide Wafer-based Thin Body (5 nm) Double-gate MOSFETs for Hybrid RF Applications",

keywords = "Fermi-dirac statistics, flat-band voltage, microelectronics, nanotechnologies, NEGF, VLSI.",

author = "Pattunnarajam Paramasivam and Naveenbalaji Gowthaman and Srivastava, {Viranjay M.}",

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AU - Srivastava, Viranjay M.

PY - 2024

Y1 - 2024

KW - Fermi-dirac statistics

KW - flat-band voltage

KW - microelectronics

KW - nanotechnologies

KW - NEGF

KW - VLSI.

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JO - Recent Patents on Nanotechnology

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Parametric Analysis of Indium Gallium Arsenide Wafer-based Thin Body (5 nm) Double-gate MOSFETs for Hybrid RF Applications

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