Performance Analysis of 10 nm FinFET with Scaled Fin-Dimension and Oxide Thickness

Shashi K. Dargar; Viranjay M. Srivastava

doi:10.1109/ICACTM.2019.8776710

Performance Analysis of 10 nm FinFET with Scaled Fin-Dimension and Oxide Thickness

Shashi K. Dargar, Viranjay M. Srivastava

University of KwaZulu-Natal

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

14 Citations (SciVal)

Original language	English
Title of host publication	2019 International Conference on Automation, Computational and Technology Management, ICACTM 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1-5
Number of pages	5
ISBN (Electronic)	9781538680100
DOIs	https://doi.org/10.1109/ICACTM.2019.8776710
Publication status	Published (VoR) - Apr 2019
Event	2019 International Conference on Automation, Computational and Technology Management, ICACTM 2019 - London, United Kingdom Duration: 24 Apr 2019 → 26 Apr 2019

Publication series

Name	2019 International Conference on Automation, Computational and Technology Management, ICACTM 2019

Conference

Conference	2019 International Conference on Automation, Computational and Technology Management, ICACTM 2019
Country/Territory	United Kingdom
City	London
Period	24/04/19 → 26/04/19

Keywords

DIBL
Microelectronics
Process parameter variation
Scaling
Short channel effects
SOI-FinFET
VLSI

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10.1109/ICACTM.2019.8776710

Cite this

Dargar, S. K., & Srivastava, V. M. (2019). Performance Analysis of 10 nm FinFET with Scaled Fin-Dimension and Oxide Thickness. In 2019 International Conference on Automation, Computational and Technology Management, ICACTM 2019 (pp. 1-5). Article 8776710 (2019 International Conference on Automation, Computational and Technology Management, ICACTM 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICACTM.2019.8776710

Dargar, Shashi K. ; Srivastava, Viranjay M. / Performance Analysis of 10 nm FinFET with Scaled Fin-Dimension and Oxide Thickness. 2019 International Conference on Automation, Computational and Technology Management, ICACTM 2019. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 1-5 (2019 International Conference on Automation, Computational and Technology Management, ICACTM 2019).

@inproceedings{b6d9718850944979974d0785f8786f95,

title = "Performance Analysis of 10 nm FinFET with Scaled Fin-Dimension and Oxide Thickness",

keywords = "DIBL, Microelectronics, Process parameter variation, Scaling, Short channel effects, SOI-FinFET, VLSI",

author = "Dargar, {Shashi K.} and Srivastava, {Viranjay M.}",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 International Conference on Automation, Computational and Technology Management, ICACTM 2019 ; Conference date: 24-04-2019 Through 26-04-2019",

year = "2019",

month = apr,

doi = "10.1109/ICACTM.2019.8776710",

language = "English",

series = "2019 International Conference on Automation, Computational and Technology Management, ICACTM 2019",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "1--5",

booktitle = "2019 International Conference on Automation, Computational and Technology Management, ICACTM 2019",

}

Dargar, SK & Srivastava, VM 2019, Performance Analysis of 10 nm FinFET with Scaled Fin-Dimension and Oxide Thickness. in 2019 International Conference on Automation, Computational and Technology Management, ICACTM 2019., 8776710, 2019 International Conference on Automation, Computational and Technology Management, ICACTM 2019, Institute of Electrical and Electronics Engineers Inc., pp. 1-5, 2019 International Conference on Automation, Computational and Technology Management, ICACTM 2019, London, United Kingdom, 24/04/19. https://doi.org/10.1109/ICACTM.2019.8776710

Performance Analysis of 10 nm FinFET with Scaled Fin-Dimension and Oxide Thickness. / Dargar, Shashi K.; Srivastava, Viranjay M.
2019 International Conference on Automation, Computational and Technology Management, ICACTM 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 1-5 8776710 (2019 International Conference on Automation, Computational and Technology Management, ICACTM 2019).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Performance Analysis of 10 nm FinFET with Scaled Fin-Dimension and Oxide Thickness

AU - Dargar, Shashi K.

AU - Srivastava, Viranjay M.

PY - 2019/4

Y1 - 2019/4

KW - DIBL

KW - Microelectronics

KW - Process parameter variation

KW - Scaling

KW - Short channel effects

KW - SOI-FinFET

KW - VLSI

UR - http://www.scopus.com/inward/record.url?scp=85070626928&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85070626928&partnerID=8YFLogxK

U2 - 10.1109/ICACTM.2019.8776710

DO - 10.1109/ICACTM.2019.8776710

M3 - Conference contribution

AN - SCOPUS:85070626928

T3 - 2019 International Conference on Automation, Computational and Technology Management, ICACTM 2019

SP - 1

EP - 5

BT - 2019 International Conference on Automation, Computational and Technology Management, ICACTM 2019

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2019 International Conference on Automation, Computational and Technology Management, ICACTM 2019

Y2 - 24 April 2019 through 26 April 2019

ER -

Dargar SK, Srivastava VM. Performance Analysis of 10 nm FinFET with Scaled Fin-Dimension and Oxide Thickness. In 2019 International Conference on Automation, Computational and Technology Management, ICACTM 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 1-5. 8776710. (2019 International Conference on Automation, Computational and Technology Management, ICACTM 2019). doi: 10.1109/ICACTM.2019.8776710

Performance Analysis of 10 nm FinFET with Scaled Fin-Dimension and Oxide Thickness

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Keywords

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