Performance Analysis of 10 nm FinFET with Scaled Fin-Dimension and Oxide Thickness

Shashi K. Dargar, Viranjay M. Srivastava

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    12 Citations (SciVal)
    Original languageEnglish
    Title of host publication2019 International Conference on Automation, Computational and Technology Management, ICACTM 2019
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Pages1-5
    Number of pages5
    ISBN (Electronic)9781538680100
    DOIs
    Publication statusPublished (VoR) - Apr 2019
    Event2019 International Conference on Automation, Computational and Technology Management, ICACTM 2019 - London, United Kingdom
    Duration: 24 Apr 201926 Apr 2019

    Publication series

    Name2019 International Conference on Automation, Computational and Technology Management, ICACTM 2019

    Conference

    Conference2019 International Conference on Automation, Computational and Technology Management, ICACTM 2019
    Country/TerritoryUnited Kingdom
    CityLondon
    Period24/04/1926/04/19

    Keywords

    • DIBL
    • Microelectronics
    • Process parameter variation
    • Scaling
    • Short channel effects
    • SOI-FinFET
    • VLSI

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