@article{5f45e0c0cd8a4135996c8ae190560b37,
title = "Performance analysis of high-k dielectric based silicon nanowire gate-all-around tunneling FET",
keywords = "Band-to-band tunneling, GAA structure, Nanotechnology, Si-nanowire, tunnel FET, VLSI",
author = "Dargar, {Shashi K.} and Srivastava, {Viranjay M.}",
note = "Publisher Copyright: {\textcopyright} 2019 Int. J. Elec. & Elecn. Eng. & Telcomm.",
year = "2019",
month = nov,
day = "1",
doi = "10.18178/ijeetc.8.6.340-345",
language = "English",
volume = "8",
pages = "340--345",
journal = "International Journal of Electrical and Electronic Engineering and Telecommunications",
issn = "2319-2518",
publisher = "ETPub: Engineering and Technology Publishing",
number = "6",
}