Performance comparison of stacked dual-metal gate engineered cylindrical surrounding double-gate MOSFET

    Research output: Contribution to journalArticlepeer-review

    2 Citations (SciVal)
    Original languageEnglish
    Pages (from-to)29-34
    Number of pages6
    JournalInternational Journal of Electronics and Telecommunications
    Volume67
    Issue number1
    DOIs
    Publication statusPublished (VoR) - 2021

    Keywords

    • Cylindrical surrounding double-gate
    • Dual-material gate
    • Metal-oxide-semiconductor transistor
    • Microelectronics
    • Nanotechnology
    • Short-channel effects

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