Possibilities of HfO 2 for double-pole four-throw double-gate RF CMOS switch

Viranjay M. Srivastava*, G. Singh, K. S. Yadav

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    2 Citations (SciVal)
    Original languageEnglish
    Title of host publicationProceedings - 2011 4th IEEE International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, MAPE 2011
    Pages309-312
    Number of pages4
    DOIs
    Publication statusPublished (VoR) - 2011
    Event2011 4th IEEE International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, MAPE 2011 - Beijing, China
    Duration: 1 Nov 20113 Nov 2011

    Publication series

    NameProceedings - 2011 4th IEEE International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, MAPE 2011

    Conference

    Conference2011 4th IEEE International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, MAPE 2011
    Country/TerritoryChina
    CityBeijing
    Period1/11/113/11/11

    Keywords

    • CMOS Switch
    • Double-Gate MOSFET
    • DP4T Switch
    • Hafnium-dioxide
    • High Dielectric
    • Radio Frequency
    • RF Switch
    • VLSI

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