@inproceedings{a9c7c50e7f3c49e58ccf65a022138b60,
title = "Possibilities of HfO 2 for double-pole four-throw double-gate RF CMOS switch",
keywords = "CMOS Switch, Double-Gate MOSFET, DP4T Switch, Hafnium-dioxide, High Dielectric, Radio Frequency, RF Switch, VLSI",
author = "Srivastava, {Viranjay M.} and G. Singh and Yadav, {K. S.}",
year = "2011",
doi = "10.1109/MAPE.2011.6156224",
language = "English",
isbn = "9781424482665",
series = "Proceedings - 2011 4th IEEE International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, MAPE 2011",
pages = "309--312",
booktitle = "Proceedings - 2011 4th IEEE International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, MAPE 2011",
note = "2011 4th IEEE International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, MAPE 2011 ; Conference date: 01-11-2011 Through 03-11-2011",
}