Realization with Fabrication of Dual-Gate MOSFET Based Source Follower

Dylan Pillay; Viranjay M. Srivastava

doi:10.1007/s12633-022-01922-1

Realization with Fabrication of Dual-Gate MOSFET Based Source Follower

Dylan Pillay, Viranjay M. Srivastava^*

^*Corresponding author for this work

University of KwaZulu-Natal

Research output: Contribution to journal › Article › peer-review

9 Citations (SciVal)

Original language	English
Pages (from-to)	11979-11989
Number of pages	11
Journal	Silicon
Volume	14
Issue number	17
DOIs	https://doi.org/10.1007/s12633-022-01922-1
Publication status	Published (VoR) - Nov 2022

Funding

The authors have no relevant financial or non-financial interests to disclose.

Keywords

Dual-gate MOSFET
Efficiency
Microelectronics
Nanotechnology
Source follower
VLSI

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10.1007/s12633-022-01922-1

Cite this

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title = "Realization with Fabrication of Dual-Gate MOSFET Based Source Follower",

keywords = "Dual-gate MOSFET, Efficiency, Microelectronics, Nanotechnology, Source follower, VLSI",

author = "Dylan Pillay and Srivastava, \{Viranjay M.\}",

note = "Publisher Copyright: {\textcopyright} 2022, The Author(s), under exclusive licence to Springer Nature B.V.",

year = "2022",

month = nov,

doi = "10.1007/s12633-022-01922-1",

language = "English",

volume = "14",

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journal = "Silicon",

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AU - Pillay, Dylan

AU - Srivastava, Viranjay M.

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KW - Dual-gate MOSFET

KW - Efficiency

KW - Microelectronics

KW - Nanotechnology

KW - Source follower

KW - VLSI

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DO - 10.1007/s12633-022-01922-1

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SN - 1876-990X

VL - 14

SP - 11979

EP - 11989

JO - Silicon

JF - Silicon

IS - 17

ER -

Realization with Fabrication of Dual-Gate MOSFET Based Source Follower

Funding

Keywords

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