Scaling effect of cylindrical surrounding double-gate MOSFET: A device beyond 22 nm technology

Viranjay M. Srivastava*

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    7 Citations (SciVal)
    Original languageEnglish
    Title of host publication2017 4th International Conference on Advanced Computing and Communication Systems, ICACCS 2017
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    ISBN (Electronic)9781509045594
    DOIs
    Publication statusPublished (VoR) - 22 Aug 2017
    Event4th International Conference on Advanced Computing and Communication Systems, ICACCS 2017 - Coimbatore, India
    Duration: 6 Jan 20177 Jan 2017

    Publication series

    Name2017 4th International Conference on Advanced Computing and Communication Systems, ICACCS 2017

    Conference

    Conference4th International Conference on Advanced Computing and Communication Systems, ICACCS 2017
    Country/TerritoryIndia
    CityCoimbatore
    Period6/01/177/01/17

    Keywords

    • CSDG MOSFET
    • Double-gate MOSFET
    • nanotechnology
    • Scaling of device
    • VLSI

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