@inproceedings{e8f52169f93f4bdb85ff8c2f33a60538,
title = "Scaling effect of cylindrical surrounding double-gate MOSFET: A device beyond 22 nm technology",
keywords = "CSDG MOSFET, Double-gate MOSFET, nanotechnology, Scaling of device, VLSI",
author = "Srivastava, {Viranjay M.}",
note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 4th International Conference on Advanced Computing and Communication Systems, ICACCS 2017 ; Conference date: 06-01-2017 Through 07-01-2017",
year = "2017",
month = aug,
day = "22",
doi = "10.1109/ICACCS.2017.8014562",
language = "English",
series = "2017 4th International Conference on Advanced Computing and Communication Systems, ICACCS 2017",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2017 4th International Conference on Advanced Computing and Communication Systems, ICACCS 2017",
}