Scaling Effect on Parameters of HfO2 Based CSDG MOSFET

Research output: Contribution to journal › Article › peer-review

Original language	English
Journal	International Journal of Engineering and Technology
DOIs	https://doi.org/10.21817/ijet/2017/v9i1/170902322
Publication status	Published (VoR) - 1 Apr 2017

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@article{eb4eac579ea04cadb8ab092b1b7dfc0d,

title = "Scaling Effect on Parameters of HfO2 Based CSDG MOSFET",

author = "Srivastava, \{Viranjay M.\}",

year = "2017",

month = apr,

day = "1",

doi = "10.21817/ijet/2017/v9i1/170902322",

language = "English",

journal = "International Journal of Engineering and Technology",

issn = "2319-8613",

publisher = "Engg Journals Publications",

}